| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SJ541 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ518 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ517 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK1358 |
FET Silicon N Channel MOS Type(for High Speed High Current DC-DC Converter Relay Drive and Motor Diver)
Field Effect Transistor
FET, Silicon N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver)
FET/ Silicon N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2545 |
FET Silicon N Channel Mos Type(for High speed, High Voltage Switching)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3289 |
Silicon N Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SK3349 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK3378 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK3288 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
